中国激光, 2010, 37 (S1): 330, 网络出版: 2010-10-29  

P型碲镉汞液相外延材料As掺杂的研究

Research on P-Type As-Doped HgCdTe Film Grown by Liquid Phase Epitaxy
作者单位
中国科学院上海技术物理研究所红外成像材料与器件重点实验室, 上海 200083
摘要
As掺杂HgCdTe薄膜材料在研制高工作温度(HOT)红外探测器方面有着特殊的用途, 能够有效抑制高温下产生的复合电流。富Te液相外延中As的分凝系数非常低, 故掺杂原子数分数也很低, 约为1015 cm-3。虽然, 富Te液相外延下生长的As无法占据Te位成为AsTe受主, 但是, 通过富Hg高温热处理, 这些As原子能够激活成为AsTe受主。通过富Te液相外延(LPE)技术, 制备了As掺杂HgCdTe薄膜材料, 通过后期富Hg高温热退火(400 ℃), 成功获得低掺杂原子数分数P型As掺杂HgCdTe薄膜材料。通过二次离子质谱(SIMS)确定掺杂原子数分数。利用变温霍尔测试(10~300 K)测量了材料的霍尔效应及相应电阻率, 获得了As掺杂HgCdTe薄膜材料的基本电学性质。
Abstract
Epitaxial growth of As-doped HgCdTe is essential of HOT infrared (IR) detector and helpful to suppress dark currents at high temperature. Segregation coefficients for incorporating As employing Te-rich liquid phase epitaxy (LPE) are very low, thus concentration of As in the HgCdTe film grown by LPE is very low (about 1015 cm-3). Though a portion of the total As do not appear to be activated as acceptors, As is fully activated as an acceptor(AsTe) under Hg-saturated conditions. As-doped HgCdTe films are obtained by Te-rich LPE, and after annealing at 400 ℃ in Hg-rich ambient, and P-type HgCdTe films are obtained. The concentration of As is determined by secondary ion mass spectroscopy (SIMS). The Hall effect and resistivity are measured in the temperature range between 10 and 300 K. Electrical properties of As-doped HgCdTe film are reported.

仇光寅, 魏彦锋, 徐庆庆, 陈晓静, 张传杰, 杨建荣. P型碲镉汞液相外延材料As掺杂的研究[J]. 中国激光, 2010, 37(S1): 330. Qiu Guangyin, Wei Yanfeng, Xu Qingqing, Chen Xiaojing, Zhang Chuanjie, Yang Jianrong. Research on P-Type As-Doped HgCdTe Film Grown by Liquid Phase Epitaxy[J]. Chinese Journal of Lasers, 2010, 37(S1): 330.

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