报道了一种通过直接氮化Al粉合成氮化铝(AlN)纳米线的方法。该方法无需任何催化剂, 并且可以获得大面积的单一形貌的AlN纳米线。所制备的AlN纳米线的平均长度超过20 μm, 直径为30～125 nm, 是沿着[001]方向生长的单晶六方纤锌矿结构。场发射特性测试结果表明, AlN超长纳米线的开启电场为6.3 V/μm, 阈值电场为12.2 V/μm, 最大电流密度达1 440 μA/cm2。这暗示着 AlN超长纳米线是一种很有潜力的冷阴极纳米材料。

This paper reports a catalyst-free method to prepare ultra-long aluminum nitride nanowires in large-area by direct nitridation of Al powder. The as-prepared AlN nanowires have a mean length of over 20 μm and a diameter ranging between 30 nm and 125 nm. The AlN nanowires are all single crystalline hexagonal wurtzite structures and grow along [001] direction. Field emission measurements show that the turn-on field and threshold field of AlN ultra-long nanowires is respectively 6.3 V/μm and 12.2 V/μm, and their maximum current density can reach 1 440 μA/cm2, which suggests it is a kind of promising cold cathode material candidate in field emission display (FED).