发光学报, 2010, 31 (6): 831, 网络出版: 2011-02-15  

闪烁晶体碘化铯在紫外光和X射线激发下的发光特性

Emission Properties of Scintillator Crystal CsI∶Tl Excited by X-ray and UV Light
作者单位
1 北京师范大学 分析测试中心, 北京100875
2 中国地质大学(北京) 材料科学与工程学院, 北京100083
3 北京师范大学 物理系, 北京100875
摘要
室温下掺铊碘化铯(CsI∶Tl)晶体的吸收谱在230~320 nm范围内有3个特征峰:310 nm(4 eV)、270 nm(4.6 eV)和245 nm(5.1 eV)。采用这3种不同激发能量(对应不同激发机制)的近紫外(UV)光激发得到的荧光(PL)光谱相同。这些PL谱与钨(W)靶X射线激发的辐照致荧光(RL)谱也类似。经分峰计算, PL和RL均含有4种熟知的3.1 eV(400 nm)、2.55 eV(486 nm)、2.25 eV(550 nm)和2.1 eV(590 nm)发光组分, 但RL中2.1 eV组分高于PL, 同时2.55 eV组分又低于PL。分析认为, 这一差异来自于X射线对晶体的辐照损伤Tl+Va+、Tl0Va+, 相关的2.1 eV吸收峰与2.55 eV发光带重叠。结果表明:X射线比紫外光更易产生损伤从而影响晶体CsI∶Tl的发光特性。
Abstract
The absorption spectra of crystals CsI∶Tl contain 310 nm (40 eV), 270 nm (4.6 eV) and 245 nm (5.1 eV) three characteristic features within the region 230~320 nm at the room temperature. The same PL spectra are observed under the excitations of the three UV lights 310,270,245 nm. These PL spectra are similar to the radioluminescence (RL) under the X-ray excitations from tungsten (W) target tube. Both PL and RL are composed of luminescence at 3.10, 2.55, 2.25, 2.10 eV using Gauss deconvolution program. However, the 2.10 eV component in RL is stronger than that in PL while the 2.55 eV component is weaker. Such changes are caused from the radiation defects Tl+Va+ and Tl0Va+ created by X-ray irradiations, which lead to increasing Tl2+-STE and its emission (2.10 eV) accompanied by its self-absorption (2.55 eV) in CsI∶Tl. The results show that X-ray induces the radiation defects more easily than UV light, which might affect luminescence features of the crystal.

吴正龙, 王金梅, 王亚芳, 陈鸾, 杨百瑞. 闪烁晶体碘化铯在紫外光和X射线激发下的发光特性[J]. 发光学报, 2010, 31(6): 831. WU Zheng-long, WANG Jin-mei, WANG Ya-fang, CHEN Luan, YANG Bai-rui. Emission Properties of Scintillator Crystal CsI∶Tl Excited by X-ray and UV Light[J]. Chinese Journal of Luminescence, 2010, 31(6): 831.

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