发光学报, 2010, 31 (6): 854, 网络出版: 2011-02-15
生长在p-GaAs衬底上的ZnO基异质结二极管电致发光
Ultraviolet Electroluminescence from ZnO-based Heterojunction Light-emitting Diodes Fabricated on p-GaAs Substrate
摘要
利用等离子体辅助分子束外延在p型砷化镓衬底上制备了ZnO异质结发光二极管。实验表明:GaAs与ZnO之间的氧化镁绝缘层能够有效改善器件光电性能, I-V特性的研究表明该器件具有良好的整流特性, 开启电压为3 V, 电致发光光谱由一个紫外发光峰和一个可见发光带构成, 其来源分别为ZnO层中近带边缺陷以及深能级缺陷相关的辐射复合。
Abstract
ZnO-based heterojunction light-emitting diodes have been fabricated on p-type GaAs substrate by plasma-assisted molecular beam expitaxy. An electron-blocking MgO layer between thin ZnO film and p-GaAs substrate plays a key role in improving performance of the diodes. Comparing with the n-ZnO/p-GaAs heterojunction, the ZnO/MgO/p-GaAs heterojunction shows a typical diode characteristic with a forward threshold voltage of 3 V. Electroluminescence measurement indicates that the ZnO/MgO/p-GaAs heterojunction has a visible emission band attributed to the defect-related recombination in the ZnO layer and an ultraviolet emission peak.
李炳辉, 姚斌, 李永峰, 邓蕊, 张振中, 刘卫卫, 单崇新, 张吉英, 申德振. 生长在p-GaAs衬底上的ZnO基异质结二极管电致发光[J]. 发光学报, 2010, 31(6): 854. LI Bing-hui, YAO Bin, LI Yong-feng, DENG Rui, ZHANG Zhen-zhong, LIU Wei-wei, SHAN Chong-xin, ZHANG Ji-ying, SHEN De-zhen. Ultraviolet Electroluminescence from ZnO-based Heterojunction Light-emitting Diodes Fabricated on p-GaAs Substrate[J]. Chinese Journal of Luminescence, 2010, 31(6): 854.