红外与毫米波学报, 2009, 28 (2): 81, 网络出版: 2010-12-13
一种ft为176 GHz、大电流多指结构的InGaAs/InP异质结双极晶体管
HIGH CURRENT, MULTI-FINGER InGaAs/InP HETEROSTRUCTURE BIPOLAR TRANSISTOR WITH ft OF 176 GHz
摘要
针对毫米波电路对大电流、高截止频率器件的要求, 利用平坦化技术, 设计并制作成功了结构紧凑的四指合 成InGaAs/InP异质结双极晶体管.实验结果表明发射极的宽度可减小到1μm.Kirk电流可达到110mA, 电流增益截 止频率达到176GHz.这种器件有望在中等功率的毫米波电路中有所应用
Abstract
To meet the requirements of millimeter wave circuits for high-current and high cutoff-frequency devices, a compact 4-finger InGaAs/InP single heterostructure bipolar transistor(HBT) was designed and fabricated successfully by using planarization technology. The results show that the width of the emitter fingers is as small as 1μm, the high Kirk current of 4-finger HBT reaches 110mA, and the current gain cutoff frequency is as high as 176GHz. The device is promising on the applications in the medium-power circuits operating at millimeter-wave range.
金智, 程伟, 刘新宇, 徐安怀, 齐鸣. 一种ft为176 GHz、大电流多指结构的InGaAs/InP异质结双极晶体管[J]. 红外与毫米波学报, 2009, 28(2): 81. JIN Zhi, CHENG Wei, LIU Xin-Yu, XU An-Huai, QI Ming. HIGH CURRENT, MULTI-FINGER InGaAs/InP HETEROSTRUCTURE BIPOLAR TRANSISTOR WITH ft OF 176 GHz[J]. Journal of Infrared and Millimeter Waves, 2009, 28(2): 81.
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