使用Bridgman法生长的PbTe0.92Se0.08材料在硅衬底上沉积硒碲铅薄膜, 采用X射线衍射(XRD)、电子扫描显微术(SEM)、能量散射X射线分析(EDAX)对薄膜的结构、表面形貌和化学配比进行了分析.结果表明, 沉积的硒碲铅薄膜为多晶结构, 具有明显的择优取向, 晶粒为矩形.衬底温度对硒碲铅薄膜的红外光学性能有明显的影响, 薄膜的折射率在5.2到5.8之间, 消光系数均小于0.1, 在波长大于6 μm的红外光谱范围, 一定衬底温度沉积的薄膜消光系数具有10-3量级.研究表明, 硒碲铅材料在红外光学薄膜领域具有应用前景.

Thin-films of lead tellurium selenide were evaporated on silicon substrates from a resource of PbTe0.92Se0.08 bulk crystal grown by Bridgman method. X-ray diffraction (XRD), scanning electron microscope (SEM), and energy-dispersive analysis by X-ray (EDAX) were used to characterize the structural and surface morphological properties, as well as chemical compositions of the thin-films. The results indicate that thin-films of lead tellurium selenide have a polycrystalline structure and a preferred orientation during the deposition. It was also revealed that the grains appear as rectangles. By comparison of the optical properties of the thin-films deposited at different substrate-temperatures, it was found that substrate temperature has an important effect on the infrared optical properties of thin-films. The refractive index of the lead tellurium selenide thin-films lies between 5.2 and 5.8, and the extinction coefficient is lower than 0.1. When the wavelength is greater than 6μm, the extinction coefficient of the thin-films is as less as 10-3. It can be inferred that lead tellurium selenide is a potential material to be used in the infrared coatings.