介绍了近年来Mg2Si薄膜的研究进展。从Mg2Si材料的晶体结构出发,重点对Mg2Si薄膜的基本性质、制备方法和应用前景进行了论述。研究表明,Mg2Si是一种窄带隙间接半导体材料,在光电和热电领域都具有较好的应用价值,因其兼具了组成元素地层含量丰富、无毒、无污染等优点,被视为是一种新型的环境友好半导体材料。在Mg2Si薄膜的外延生长技术方面,目前比较成熟的方法有分子束外延、脉冲激光沉积、反应扩散等多种,但普遍存在制备条件较苛刻,成膜质量不高等缺点。最后,对目前存在的问题及未来的研究动向做了简要讨论。

Abstract: Recent developments of Mg2Si films are reviewed. On the basis of the crystal structure of Mg2Si, the basic properties, preparation methods, and application prospects of the films are presented. The researches show that Mg2Si is a kind of semiconductor with narrow-band-gap, which has good applications in photovoltaic and thermoelectric devices. Furthermore, the film is a new kind of environmental-friendly semiconductor mate-rial, and because the compositions of elements are rich in strata and non-toxic pollution, the materials attract great attention. In the technique of epitaxial growth, the relatively mature methods include molecular beam ep-itaxy, pulsed laser deposition, reaction-diffusion and so on. However, these methods have the problems of harsh preparation and poor quality of the thin film. Finally, current problems and future research trends of the materials are briefly discussed.