光学学报, 2010, 30 (s1): s100107, 网络出版: 2010-12-21  

温度对基于金辅助金属氧化物化学汽相沉积生长的GaAs纳米线影响

Effect of Growth Temperature on GaAs Nanowires Formed by Au-Assisted MOCVD
作者单位
北京邮电大学信息光子学与光通信教育部重点实验室, 北京 100876
摘要
利用金辅助的金属氧化物化学汽相沉积法(MOCVD)在汽液固(VLS)生长机制下GaAs (111) B衬底上生长了GaAs纳米线。研究了三个生长温度(500 ℃,530 ℃,560℃)对纳米线形貌及晶体质量的影响。在较低生长温度时,纳米线生长速率与纳米线直径无关,且纳米线上下直径分布均匀。随着温度的增高,纳米线成明显的圆锥状。当温度升高时,相对较粗的纳米线,长度缩短,这是因为在高温时VLS生长被抑制;对于相对较细的纳米线,长度是先减少后增大,这是由于在温度升高时Ga原子的扩散作用增大。温度的升高还导致了纳米线晶体质量的下降。低温时只有少量缺陷在相对较细的纳米线中出现;对于相对较粗的纳米线,其晶体结构为纯的闪锌矿结构。温度增高导致了Au-Ga合金纳米颗粒的不稳定,从而造成了缺陷的增加。
Abstract
The effect of temperature on GaAs nanowires (NWs) growth is investigated. Three samples are grown on GaAs (111) B substrate by Au-assisted metalorganic chemical vapor deposition (MOCVD) using vapor-liquid-solid (VLS) mechanism at 500 ℃, 530 ℃ and 560 ℃, respectively. It is found that all samples are vertical to the substrate. Their length growth at low temperature are independent with their diameters, and the NWs are straight from base to top. The growth rate of thick NWs increase reversely with growth temperature. That is because the VLS mechanism growth is suppressed at high temperature. For thin NWs, the growth is induced by Ga atom diffusion at high temperature. The NWs growth at high temperature taperes. That ascribes to lateral growth on NWs sidewalls. It is revealed that crystalline structure of NWs grown at low temperature is pure zinc blende (ZB) and there is no defect in thick NWs. At high temperature, there are many defects in NWs, such as stacking faults and twins.

郭经纬, 黄辉, 叶显, 任晓敏, 蔡世伟, 王伟, 王琦, 黄永清, 张霞. 温度对基于金辅助金属氧化物化学汽相沉积生长的GaAs纳米线影响[J]. 光学学报, 2010, 30(s1): s100107. Guo Jingwei, Huang Hui, Ye Xian, Ren Xiaomin, Cai Shiwei, Wang Wei, Wang Qi, Huang Yongqing, Zhang Xia. Effect of Growth Temperature on GaAs Nanowires Formed by Au-Assisted MOCVD[J]. Acta Optica Sinica, 2010, 30(s1): s100107.

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