利用描述半导体内热载流子效应的１维能量平衡模型, 对波段外10.6 μm激光辐照下光导型HgCdTe探测器的电学响应进行了数值模拟。结果表明：在激光开始辐照和停止辐照瞬间, 探测器电阻的快速变化是由载流子温度的迅速变化引起的;在激光辐照过程中以及激光停照后, 探测器电阻的缓慢变化是由晶格温度的缓慢变化进而导致载流子温度发生缓慢变化所致。模拟结果与对实验曲线的定性分析得出的结论一致。

A 1-D energy balance model is used to describe the electrical responses of photoconductor (PC)-type HgCdTe detector under out-band 10.6 μm laser irradiation. The simulated resistance-vs-time curve agrees with the experimental curve in terms of curvilinear trend. The analyses of simulated results show that the sharp change of detector resistance results from the sharp change of carrier temperature at the very beginning and the very ending of laser irradiation, and that the slow change of the resistance results from the slow change of lattice temperature during and after laser irradiation, which is identical with the conclusions from the analyses of experimental results．