激光与光电子学进展, 2011, 48 (2): 021301, 网络出版: 2011-01-12
小尺寸硅绝缘体光波导损耗测量
Loss Measurement of Small-Size Silicon-on-Insulator Ridge Waveguide
集成光学 法布里珀罗腔技术 脊形波导 损耗测量 反射谱 integrated optics Fabry-Perot cavity technique ridge waveguide loss measurement reflection spectrum
摘要
基于法布里珀罗(F-P)腔理论建立了一种简单有效的硅绝缘体(SOI)光波导损耗测量方法。该方法采用端面耦合,通过测试波导反射功率谱并利用傅里叶频谱信息,完成波导损耗的测量。推导中指出了无法直接利用反射谱F-P峰峰谷值求解损耗的限制因素。应用该方法实现了对刻蚀深度为750 nm和宽度为1200 nm的SOI脊形波导损耗的测量,表明该测量方法能够对小尺寸、低损耗波导实现较高精度的损耗测量。
Abstract
A loss measurement method on silicon-on-insulator (SOI) waveguide is proposed on the basis of Fabry-Perot (F-P) cavity theory. Through end coupling, the method utilizes the Fourier transform information of the reflection power spectrum to achieve the waveguide loss measurement. In the process of derivation, the main reason why the loss index can not be directly solved from the peak and valley values of the F-P peaks of reflection spectrum is presented. In the experiment, the loss measurement on a SOI ridge waveguide with an etching depth of 750 nm and a width of 1200 nm is achieved by using the method, which indicates that the method can be used for the loss measurement on small size low-loss waveguides with a relatively high accuracy.
刘军, 袁晓东, 罗章, 郭楚才, 叶卫民. 小尺寸硅绝缘体光波导损耗测量[J]. 激光与光电子学进展, 2011, 48(2): 021301. Liu Jun, Yuan Xiaodong, Luo Zhang, Guo Chucai, Ye Weimin. Loss Measurement of Small-Size Silicon-on-Insulator Ridge Waveguide[J]. Laser & Optoelectronics Progress, 2011, 48(2): 021301.