硅基二氧化硅阵列波导光栅是集成化波分复用光网络中的核心器件之一。对其制作工艺的研究对提高器件的性能具有重大意义。提出一种在波导上包层使用硼锗共掺高温退火的工艺方法，成功实现阵列波导间空隙的填充，并将阵列波导光栅的插入损耗成功降低约2 dB。相对于传统的硼磷硅玻璃工艺，此方法避免了剧毒气体磷烷的使用，工艺简便安全，同时降低了成本。最后，通过对光刻、增强型等离子体化学气相沉积法(PECVD)薄膜沉积、感应耦合等离子体(ICP)干法刻蚀和高温退火回流等工艺步骤的改进、完善和优化，实现了额外损耗约为1.5 dB的阵列波导光栅。

The arrayed waveguide grating is one of the key devices in integrated wavelength division multiplexing optical networks. In order to realize high performance arrayed waveguide gratings, it is essential to optimize the fabrication process of silica-on-silicon planar optical waveguides. A new process for filling the gaps of plasma enhanced chemical rapor deposition(PECVD) silica waveguides using boron-germanium co-doped upper-cladding and high-temperature annealing is proposed. And the measured transmission loss of an arrayed waveguide grating is reduced by about 2 dB. By reason of avoiding the use of toxic phosphine, the proposed method has potential advantages compared with the commonly used borophosphosilicate glass (BPSG) processing. Every step of fabrication, such as photolithography, PECVD, inductively coupled plasma (ICP) and high-temperature thermal annealing, is modified and improved. The excess loss of fabricated arrayed waveguide grating is about 1.5 dB.