研制了一种新型窄脉冲半导体激光器的驱动电源，包括驱动电路和温控电路两部分。驱动电路采用高速金属氧化物半导体场效应晶体管(MOSFET)作开关，为激光器提供一个重复频率高(0～50 kHz)、前沿快(2.2～4.9 ns)、脉宽窄(4.6～12.1 ns)、脉冲峰值电流大(0～72.2 A)的脉冲信号，且输出的激光脉冲波形平滑。对不同的激光器，改变电路中电源电压、电阻、电容参数，可获得不同的重复频率、前沿、脉冲宽度、脉冲峰值电流。温控电路采用高精度的比例积分微分(PID)温控，保证了激光器输出功率和中心波长的稳定。此激光器驱动电源不仅可作为一般高速、窄脉冲半导体激光器的驱动电源，也是大能量、窄脉宽的半导体激光器种子光源的理想驱动电源。

A novel drive power for narrow pulse laser diode, which is composed of driving circuit and temperature controlling circuit, has been designed. High speed metal-oxide-semiconductor field effect transistor (MOSFET) is applied in the driving circuit as the switch to provide the laser diode with smooth pulse of high repetition rate (0～50 kHz), fast rise time (2.2～4.9 ns), narrow pulse width (4.6～12.1 ns) and high peak pulse current (0～72.2 A). According to the requirements of variety of laser diodes, different repetition rates, rise time, pulse widths and peak pulse currents can be achieved by varying the voltage, resistor, capacitor in the circuit. A precise proportional-integral differential (PID) temperature controlling module is adopted in the circuit to ensure the stability of the output power and the central wavelength of the laser diode. The drive power can be not only used as the power supply for the traditional high speed, narrow pulse width laser diode, but also an ideal drive power for the high energy, narrow width pulse laser diode.