光束质量是半导体激光器应用的最大瓶颈，但是可以利用光束整形技术加以改善。随着半导体激光合束技术的发展，半导体激光光束质量的提高，由于其在效率方面的优势，大功率半导体激光技术得到迅速发展。采用连续输出60 W,转换效率达到57%的880 nm大功率半导体激光bar条，组成20层的半导体激光叠阵，输出功率达到1183 W，通过快慢轴准直及光束整形提高激光器的光束质量,最终实现1 kW功率输出，电-光转换效率超过45.8%，光束质量达到79.3 mm·mrad×81.2 mm·mrad。从而使半导体激光器可直接应用于熔覆、表面硬化等领域。

The major drawback of high power diode laser systems is their poor beam quality, which can be improved by beam shaping and beam combination. With the high wall-plug efficiency, high power laser diode developed rapidly. Base on bars rated to 60 W and 57% conversion efficiency, vertically stacked arrays (twenty bars) of such configuration are demonstrated with rated to 1183 W. The beam quality of high-power high brightness 880 nm laser diode source is improved with beam shaping. Beam parameter product of 79.3 mm·mrad×81.2 mm·mrad, electro-optical conversion efficiency of more than 45.8% and continuous output power of 1 kW are demonstrated. This laser can be directly applied to cladding, surface hardening and other fields.