红外, 2011, 32 (1): 27, 网络出版: 2011-02-22
大尺寸锑化铟晶体生长等径技术研究
Diameter Controlling of Large Diameter InSb Crystal
摘要
为了获得高质量的晶体,需要解决大尺寸锑化铟晶体生长过程中的精确等径控制问题。阐述了采用提拉法生长晶体 时的直径控制原理及方法,分析了影响等径控制的温度与时滞因素,并采用计算机辅助控制方法解决了大尺寸锑化铟晶体生长过程中 的精确等径控制问题。生长出的3in锑化铟晶体的生长条纹不明显,位错密度小于10个/cm2。
Abstract
To obtain high quality InSb crystals, a precision diameter-constant control technology is required in the growth process of large size InSb crystals. The principle and method for controlling the diameter of a crystal during its growth by using the Czochralski Method are presented. The factors, such as temperature and time delay, which have influence on diameter-constant control are analyzed. The precision diameter-constant control is implemented by using a computer aided method in the growth process of large size InSb crystals. The resulting InSb crystal with a diameter of 3in shows its smooth surface from the shoulder. Its dislocation density is less than 10/cm2.
王志芳, 王燕华. 大尺寸锑化铟晶体生长等径技术研究[J]. 红外, 2011, 32(1): 27. WANG Zhi-fang, WANG Yan-hua. Diameter Controlling of Large Diameter InSb Crystal[J]. INFRARED, 2011, 32(1): 27.