光电工程, 2011, 38 (1): 39, 网络出版: 2011-02-28   

基于Shack-Hartmann 的子孔径拼接波前检验技术

Wave-front Test by Sub-aperture Stitching Technique Based on Shack-Hartmann Wave-front Sensor
作者单位
1 中国科学院长春光学精密机械与物理研究所,长春 130033
2 中国科学院研究生院, 北京100039
摘要
针对传统的地基大口径望远镜自准直干涉检测受器材限制和环境影响而检测困难的问题,提出了基于Shack-Hartmann 波前探测器的子孔径拼接波前检测方法。介绍了子孔径拼接检测理论和拼接算法,研究了Shack-Hartmann 下实现子孔径上波前精确测量的方法,设计了具有透射孔的光阑实现自准直光路中子孔径毫米级的定位。实验使用32 单元的Shack-Hartmann 波前探测器和40 mm 的平面反射镜,实现了口径扩展比1.8 的子孔径拼接检测;对比表明均化误差的处理方法优于两两拼接方法,其拼接检测结果与全口径检测结果之差的PV 值为0.5 波长。实验结果表明,这种技术在大口径望远镜波前自准直检测中有很好的应用前景。
Abstract
The ground-based telescope is traditionally tested by autocollimation against a flat mirror. As the aperture of telescope goes larger, the testing can not be performed any more because of the more severe limitation of unstable environment and impracticably flat mirror. The solution of testing wave-front by sub-aperture stitching technique based on Shack-Hartmann wave-front sensor is introduced. This paper begins with a simple description of Sub-Aperture Test (SAT) theory, and explores the methods aiming at more accurate Shack-Hartmann sub-aperture test result. A new trick, that put a plane with holes in the parallel light path, can make sure the location of sub-aperture hit the target. A 32 units Shack-Hartmann wave-front sensor and a 40mm flat mirror is used for testing a optical system 1.8 times larger than the flat mirror and the sub-aperture test results are stitched by two different ways. The experimental results show that error averaging method is superior in error propagation property to stitching one-by-one method, and Peak-to-Valley of the difference between the direct measurement and SAT result is 0.5 wavelength. It is concluded that the technique is useful and has a good application future in practically testing the wave-front error of great telescopes.

吴晶, 王建立, 林旭东. 基于Shack-Hartmann 的子孔径拼接波前检验技术[J]. 光电工程, 2011, 38(1): 39. WU Jing, WANG Jian-li, LING Xu-dong. Wave-front Test by Sub-aperture Stitching Technique Based on Shack-Hartmann Wave-front Sensor[J]. Opto-Electronic Engineering, 2011, 38(1): 39.

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