中国激光, 2011, 38 (3): 0302011, 网络出版: 2011-03-02   

InP基低阈值单向双稳态工作微环激光器的设计与制备

Design and Fabrication of InP-Based Low Threshold Microring Laser with Unique Unidirectional Bistability Operation
作者单位
1 天津大学电子信息工程学院, 天津 300072
2 中国电子科技集团公司第13研究所, 河北 石家庄 050051
3 天津工业大学信息与通信工程学院, 天津 300160
摘要
由于半导体微环激光器(SML)具有波长转换、可调谐和光学双稳态等特点,因此成为全光逻辑和全光存储领域的研究热点。在分析背散射耦合系数与SML工作区域(双向连续波、双向交替振荡和单向双稳态)的基础上,优化设计了环形谐振腔的结构参数和工艺流程,研制出一种低阈值、直接进入单向双稳态工作的InP基微环激光器。测试结果表明,激光器的中心激射波长为1569.65 nm,阈值电流为56 mA,当驱动电流超过阈值电流后,器件可不经过双向工作区直接进入单向双稳态,降低了双稳态工作的电流和功耗,非常适合用作光随机存储器单元。
Abstract
Semiconductor microring lasers (SMLs) have received increasing attention in the areas of all-optical logic and random storage owing to their unique characteristics for wavelength conversion, tunability and optical bistability. Based on the analysis of relationship between backscattering coupling and SML operation regimes (bidirectional continuous-wave, bidirectional alternate oscillations, unidirectional bistability), the structure parameters and process of microring resonator are optimized, and an InP-based low threshold SML with unique unidirectional bistability is fabricated. The experimental results indicate that the laser with a threshold current of 56 mA has a lasing wavelength of 1569.65 nm. Once the driving current exceeded the threshold, the SML entered into the unidirectional bistability without any bidirectional regimes. Thus the driving current and power consumption of bistability operation are reduced greatly, and the device reported here is very suitable to the optical random storage memory unites.

谢生, 郭维廉, 李献杰, 齐利芳, 于欣, 于晋龙, 陈燕, 毛陆虹, 张世林, 谷晓, 吴波, 罗俊. InP基低阈值单向双稳态工作微环激光器的设计与制备[J]. 中国激光, 2011, 38(3): 0302011. 谢生, 郭维廉, 李献杰, 齐利芳, 于欣, 于晋龙, 陈燕, 毛陆虹, 张世林, 谷晓, 吴波, 罗俊. Design and Fabrication of InP-Based Low Threshold Microring Laser with Unique Unidirectional Bistability Operation[J]. Chinese Journal of Lasers, 2011, 38(3): 0302011.

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