Chinese Optics Letters, 2011, 9 (4): 041405, Published Online: Mar. 18, 2011   

Passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser with a semiconductor saturable absorber mirror under 880-nm direct pumping Download: 1190次

Author Affiliations
1 Research Center of Laser Physics and Technology, Key Laboratory of Functional Crystal and Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
2 Key Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
3 Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
Abstract
A passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser is demonstrated with a semiconductor saturable absorber mirror by 880-nm laser-diode direct pumping. Under the absorbed pump power of 24.9 W, a maximum output power of 10.5 W at the repetition rate of 77 MHz is obtained, corresponding to the optical-optical conversion efficiency of 42.1% and the slope efficiency of 53.4%. The pulse width measured is 33 ps at the output power of 10 W.

Fangqin Li, Nan Zong, Zhichao Wang, Lin Han, Yong Bo, Qinjun Peng, Dafu Cui, Zuyan Xu. Passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser with a semiconductor saturable absorber mirror under 880-nm direct pumping[J]. Chinese Optics Letters, 2011, 9(4): 041405.

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