Chinese Optics Letters, 2011, 9 (4): 041601, Published Online: Mar. 18, 2011  

Stacking-faults-free zinc blende GaAs/AlGaAs axial heterostructure nanowires during vapor-liquid-solid growth Download: 518次

Author Affiliations
Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
Abstract
Pure zinc blende structure GaAs/AlGaAs axial heterostructure nanowires (NWs) are grown by metal organic chemical vapor deposition on GaAs(111) B substrates using Au-catalyzed vapor-liquid-solid mechanism. Al adatom enhances the influence of diameters on NWs growth rate. NWs are grown mainly through the contributions from the direct impingement of the precursors onto the alloy droplets and not so much from adatom diffusion. The results indicate that the droplet acts as a catalyst rather than an adatom collector.

Jingwei Guo, Hui Huang, Xiaomin Ren, Xin Yan, Shiwei Cai, Yongqing Huang, Qi Wang, Xia Zhang, Wei Wang. Stacking-faults-free zinc blende GaAs/AlGaAs axial heterostructure nanowires during vapor-liquid-solid growth[J]. Chinese Optics Letters, 2011, 9(4): 041601.

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