量子电子学报, 2011, 28 (2): 247, 网络出版: 2011-03-28   

溶胶凝胶法制备钼掺杂氧化锌薄膜及性质研究

Characterization of Mo-doped ZnO thin films prepared by sol-gel method
作者单位
1 中国科学院安徽光学精密机械研究所,安徽省光子器件与材料重点实验室,安徽 合肥 230031
2 中国科学院新型薄膜太阳能电池重点实验室,安徽 合肥 230031
摘要
利用溶胶凝胶法在Al2 O3 衬底上制备出了c轴择优取向的钼掺杂氧化锌(MZO)透明导电薄膜,研究了钼的掺杂量(0~1 at%)对钼掺杂氧化锌薄膜光电性能 的影响。研究结果表明:所制备的薄膜为六方纤锌矿型结构且表面平整、致密。通过高温真空退火,MZO薄膜的电阻率明显降低。且随着钼含量的增加,MZO薄膜的 电阻率呈现出先减小后增大的趋势,当钼含量为0.4at%时,获得最小电阻率为0.13 Ωcm。薄膜在近红外区域(800~2000 nm)的平均透过率大于85%, 这可以有效地拓宽光电器件的光谱范围。
Abstract
Mo-doped ZnO (MZO) films with different Mo concentration (0~1 at%) were prepared on Al2 O3 (0001) substrates by sol-gel spin coating route. It was found that the MZO films with ZnO hexagonal wurtzite structure were highly c-axis orientation. The electrical properties of MZO films can be significantly improved by the heat-treatment in vacuum. The resistivity of the films initially decreases with the increase of Mo content and then gradually increases with a further increase of Mo content. The lowest resistivity of 0.13 Ωcm was obtained at a Mo content of 0.4 at%. The carrier concentration and Hall mobility were measured and discussed to understand the electrical transport characteristics. The high average transmittance (>85%) in near-infrared region (800~2000 nm) indicates the possible use of MZO films in photoelectric device can widen absorption spectrum range.

邵景珍, 董伟伟, 陶汝华, 邓赞红, 周曙, 方晓东. 溶胶凝胶法制备钼掺杂氧化锌薄膜及性质研究[J]. 量子电子学报, 2011, 28(2): 247. SHAO Jing-zhen, DONG Wei-wei, TAO Ru-hua, DENG Zan-hong, ZHOU Shu, FANG Xiao-dong. Characterization of Mo-doped ZnO thin films prepared by sol-gel method[J]. Chinese Journal of Quantum Electronics, 2011, 28(2): 247.

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