光学 精密工程, 2011, 19 (2): 354, 网络出版: 2011-03-30   

掺硫硒化镓晶体在太赫兹波段的光学特性

Optical properties of GaSe∶S crystals in terahertz frequency range
作者单位
1 交通大学 电子物理系,中国 新竹 30010
2 Institute of Monitoring of Climatic and Ecological Systems of Siberian Branch of Russian Academy of Sciences, Tomsk Russia
摘要
利用太赫兹时域光谱技术测量了掺硫硒化镓(GaSe1-xSx)晶体在太赫兹波段的光学参数,包括折射系数、吸收系数等。使用自由空间电光取样法获得了太赫兹电磁波的脉冲波形,对不同硫掺杂量的硒化镓晶体进行了研究,在硫的掺杂量为0, 0.01, 0.14, 0.26,0.37时,在0.2~2.0 THz测得了GaSe1-xSx的折射系数、吸收系数等光学参数。此外还在吸收光谱上观察到E′(2)和E″(2)两个声子振动模态,其强度与频率会随着硫的掺杂量而改变,且即使是微量的硫掺杂也会影响吸收光谱上的声子振动模态。最后,在相位匹配ee-e的条件下,模拟了利用锁模钛蓝宝石激光使此类晶体产生太赫兹辐射的可能性。
Abstract
The frequency-dependent optical constants of GaSe∶S crystals,refractive indexes,and obsorption conficients, were measured by using the terahertz time-domain spectroscopy. By the temporal-profile measurements of the terahertz pulse, the ordinary refractive index and absorption coefficients of GaSe1-xSx(x=0,0.01,0.14,0.26,0.37) crystals in the range of 0.2-2.0 THz were obtained directly. The vibration modes of two phonons (E′(2) and E″(2)) on the absorption spectra were measured,in which their intensities and frequencies change with the doped amounts of sulfur. Furthermore, for the first time to our knowledge, the possibility of ee-e down-conversion in the THz range was demonstrated by a simulation.

罗志伟, 古新安, 朱韦臻, 唐维聪, ANDREEV YURY, LANSKII Grigory, MOROZOV Alexander, ZUEV Vladimir. 掺硫硒化镓晶体在太赫兹波段的光学特性[J]. 光学 精密工程, 2011, 19(2): 354. LUO Zhi-wei, GU Xin-an, ZHU Wei-chen, TANG Wei-cong, ANDREEV YURY, LANSKII Grigory, MOROZOV Alexander, ZUEV Vladimir. Optical properties of GaSe∶S crystals in terahertz frequency range[J]. Optics and Precision Engineering, 2011, 19(2): 354.

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