强激光与粒子束, 2011, 23 (3): 652, 网络出版: 2011-04-01
高性能X光二极管的研制
Development of X-ray diode with high performance
X光二极管 响应时间 阻抗匹配 上升时间 半高全宽 X-ray diode response time impedance match rise time full width at half maximum
摘要
作为X光测量的重要器件,X光二极管的研究和改进工作一直颇受重视。通过对储能系统和输出系统的重点研究与优化设计,研制出了新型超快响应X光二极管(XRD-Ⅱ),并在8 ps短脉冲激光装置上对探测器的性能进行了研究。实验结果表明:XRD-Ⅱ的阻抗匹配特性得到提高,耐压能力达6 kV,上升时间达40 ps,半高全宽达80 ps。标定实验给出的灵敏度结果也说明其灵敏度得到了保证。超快响应X光二极管的成功研制可大大提高X光诊断的时间分辨力,为实现精密定量诊断提供有利条件。
Abstract
A new type of X-ray diode (XRD-Ⅱ) with ultrafast response time was developed. XRD-Ⅱ detector was improved on the basis of old XRD (XRD-Ⅰ), and its performances were studied on the 8ps laser facility. The results show that XRD-Ⅱ has excellent high-voltage tolerance (to 6 kV) and super-fast response time ( rise time is about 40 ps, and full width at half maximum (FWHM) is about 80 ps when bias voltage is 5 kV). The detector calibration was carried out on Beijing synchrotron radiation facility, which shows that the detector’s sensitivity has not deteriorated.
侯立飞, 杨国洪, 刘慎业, 韦敏习, 易涛, 江少恩, 孙可煦. 高性能X光二极管的研制[J]. 强激光与粒子束, 2011, 23(3): 652. Hou Lifei, Yang Guohong, Liu Shenye, Wei Minxi, Yi Tao, Jiang Shaoen, Sun Kexu. Development of X-ray diode with high performance[J]. High Power Laser and Particle Beams, 2011, 23(3): 652.