主要研究采用离子束反应溅射(RIBS)制备SiO2薄膜的折射率、消光系数、化学计量比与氧气在氩氧混合工作气体中含量及其沉积速率的关系。研究结果表明：RIBS制备的SiO2薄膜在0.63 μm处折射率n= 1.48，消光系数小于10-5；随着沉积速率的增加，薄膜的折射率和消光系数随之变大，当沉积速率超过0.3 nm/s，即使是在纯氧环境溅射，折射率值也不低于1.5；通过对红外透射光谱的主吸收峰位置研究得到沉积的SiO2薄膜为缺氧型，化学计量比不超过1.8，且红外吸收峰位置和SiO2折射率存在对应关系，因此在不加热衬底情况下使用RIBS制备SiO2薄膜时，会限制沉积速率的提高。

Silicon oxide thin films deposited by reactive ion-beam sputtering (RIBS) of Si targets in Ar/O2 producer gas mixture were investigated. The refractive index n, extinction coefficient k, and stoichiometry were dependent on the oxygen concentration in Ar/O2 producer gas mixture and the deposition rate. Silicon oxide films with refractive index of n =1.48 and extinction coefficient of less than 10-5 were deposited with the RIBS method at the wavelength of 0.63 μm. An increase in the deposition rate results in the growth of refractive index and extinction coefficient of the film due to incomplete oxidation of silicon and formation of suboxides. In the case of deposition rate more than 0.3 nm/s, even if sputtering is performed in pure oxygen environment, the minimal value of refractive index is more than 1.5. The ana-lysis of the IR transmission spectrum proves that all the deposited films have oxygen deficiency, and the stoichiometry of silicon oxide does not exceed 1.8 based on the investigation of the position of the main absorption peak. The dependence between IR adsorption peak position and refractive index of silicon oxide is established. Thus, depositing silicon-oxide thin films with RIBS without heating the substrates limits the increase of deposition rate.