发光学报, 2011, 32 (6): 593, 网络出版: 2011-06-24
850 nm高亮度锥形半导体激光器的光电特性
Electro-optic Properties of 850 nm High-brightness Tapered Lasers
摘要
采用激射波长为850 nm的AlGaInAs/AlGaAs梯度折射率波导分别限制增益量子阱结构的外延片,设计并制备了具有条形结构和锥形结构的半导体激光器。在输出功率同为1 W时,锥形激光器的发散角、光束传播因子和亮度分别为4°、2.8和9.9 MW·cm-2·sr-1,远好于条形激光器的6°、9.2和3.0 MW·cm-2·sr-1。当外加3 A的脉冲电流时,锥形激光器峰值功率达到1.40 W,斜率效率为0.58 W/A,电光转换效率为30%。实验结果表明,锥形激光器可以在保证大功率输出的前提下,具有更高的光束质量。
Abstract
High-brightness tapered laser diode at 850 nm was fabricated based on the AlGaInAs/A1GaAs chip with graded-index waveguide separate confinement hetero-structure. The tapered laser has better performance than the broad laser under the same condition. The lateral divergence angles of the tapered laser and the broad laser were 4° and 6° at the output power of 1 W, while the beam propagation factor M2 were 2.8 and 9.2, respectively. The slope efficiency of the tapered laser had a high value of 0.58 W/A and the conversion efficiency reached 30% in the output power 1.40 W under the injection current of 3 A. The facts indicated the tape-red laser would be an ideal choice for high brightness high power laser diodes.
杨晔, 刘云, 秦莉, 张金龙, 彭航宇, 王烨, 李再金, 胡黎明, 史晶晶, 王超, 宁永强, 王立军. 850 nm高亮度锥形半导体激光器的光电特性[J]. 发光学报, 2011, 32(6): 593. YANG Ye, LIU Yun, QIN Li, ZHANG Jin-long, PENG Hang-yu, WANG Ye, LI Zai-jin, HU Li-ming, SHI Jing-jing, WANG Chao, NING Yong-qiang, WANG Li-jun. Electro-optic Properties of 850 nm High-brightness Tapered Lasers[J]. Chinese Journal of Luminescence, 2011, 32(6): 593.