半导体光子学与技术, 2010, 16 (4): 137, 网络出版: 2011-07-27  

Structural Un-uniformity and Electrical Anisotropy of μc-Si:H Films

Structural Un-uniformity and Electrical Anisotropy of μc-Si:H Films
作者单位
1 Zhong Huan System Engineering Co., Ltd, Tianjin 300060, CHN
2 Institute of Photo-electronics, Nankai University, Tianjin 300071, CHN
摘要
Abstract
Structural un-uniformity and electrical anisotropy of μc-Si∶H film are investigated in this paper. It is found that the structure of μc-Si∶H film along the direction perpendicular to the substrate is not uniform, which is modulated by film thickness. In addition, there is a dark conductivity anisotropy along the direction parallel(σ∥) and perpendicular(σ⊥)to the substrate in μc-Si∶H film. The reasons for such an property of μc-Si∶H film and the effect of oxygen contamination are analyzed.

HAN Chunlong, LI Juan. Structural Un-uniformity and Electrical Anisotropy of μc-Si:H Films[J]. 半导体光子学与技术, 2010, 16(4): 137. HAN Chunlong, LI Juan. Structural Un-uniformity and Electrical Anisotropy of μc-Si:H Films[J]. Semiconductor Photonics and Technology, 2010, 16(4): 137.

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