量子电子学报, 2011, 28 (4): 457, 网络出版: 2011-07-29
基于光弹效应的二维光子晶体能带结构特性研究
Photoelastic properties of two-dimensional photonic crystal band structure
光电子学 能带特性 有限元法 二维光子晶体 光弹效应 应力 optoelectronics band characteristics finite element method two-dimensional photonic crystals photoelastic effect stress
摘要
根据介质的光弹效应,采用有限元法对二维光子晶体的能带特性进行分析。给二维光子晶体施加应力时, 由于构成二维光子晶体介质的光弹效应,引起介质的折射率变化,使得光子晶体的能带结构发生变化。详细分析了 外加应力变化对基于 Si/SiO 二维光子晶体能带结构特性的影响,结果表明,禁带的起始波长、截止波长及禁带宽度的 变化量与外加应力呈线性关系。
Abstract
In terms of photoelastic effect of medium, the band characteristics of two-dimensional (2D) photonic crystals were analyzed by finite element method. The photoelastic effect of the medium composing 2D photonic crystals causes change of its refractive index when imposed by stress, the band structure of 2D photonic crystals varies accordingly. The effect of stress on the structural characteristics of band gap in 2D Si/SiO photonic crystals was analyzed in detail. And for each band gap, the variation of start wavelength, cut-off wavelength and bandwidth is proportional to stress.
汪梅婷, 武校刚, 童凯. 基于光弹效应的二维光子晶体能带结构特性研究[J]. 量子电子学报, 2011, 28(4): 457. WANG Mei-ting, WU Xiao-gang, TONG Kai. Photoelastic properties of two-dimensional photonic crystal band structure[J]. Chinese Journal of Quantum Electronics, 2011, 28(4): 457.