Chinese Optics Letters, 2011, 9 (11): 111301, Published Online: Jul. 29, 2011
Influence of GaAs substrate on the transmission performance of epitaxially grown Fabry-Peerot f ilter
衬底 F-P滤波器 传输矩阵法 外延生长 130.3130 Integrated optics materials 230.1480 Bragg reflectors 230.7408 Wavelength filtering devices
Abstract
The influence of GaAs substrate on the transmission performance of a multi-film Fabry-Peerot filter (FPF), fabricated by metalorganic chemical vapor deposition epitaxial growth on GaAs substrate, is investigated using the transfer matrix method. On the basis of the theoretical simulation, we determine that the quality of the resonant transmission peak of this epitaxially grown FPF (EG-FPF) deteriorates through splitting when the substrate is taken into account. Rapid periodic oscillation of peak-transmittivity along with the alteration of substrate thickness is also observed in the simulation results. Finally, a remarkably improved transmission performance of the EG-FPF is obtained by thinning the substrate down to a suitable thickness range through well-controlled grinding and polishing.
Wei Wang, Yongqing Huang, Xiaofeng Duan, Qiang Yan, Xiaomin Ren, Shiwei Cai, Jingwei Guo, Hui Huang. Influence of GaAs substrate on the transmission performance of epitaxially grown Fabry-Peerot f ilter[J]. Chinese Optics Letters, 2011, 9(11): 111301.