半导体光子学与技术, 1996, 2 (1): 42, 网络出版: 2011-08-02  

Implant Compositional Disordering on InGaAs/InP MQW Structures

Implant Compositional Disordering on InGaAs/InP MQW Structures
作者单位
Tianjin Normal University, Tianjin 300074, CHN
摘要
Abstract
Some new results of implant disordering on InP based MQW structures by im-planted compositional disordering are presented.The energy shift of PL peak depends on ion species,ion dose,annealing conditions and target temperature,The results indicate that the nonactive ions such as F^+ and Ne^+ are the best candiates for IICD,the ion dose which caused biggest blue shift is around 1×10^14cm^-2for room temperature implantation and 5×10^14cm^-2for an elevated implanted temperature of 200℃ and the optimum annealing condition is approximately 750℃for 30s.AES and TEM characterization suggests that ion bombardment by nonelectrically active ions such as F^+,Ne^+induced same amount of layer interdiffusion which results in the band gap blue shift due to the compositional changes.

ZHAO Jie, LIU Baojun, WANG Yufang, WANG Yuongchen, Thompson D A. Implant Compositional Disordering on InGaAs/InP MQW Structures[J]. 半导体光子学与技术, 1996, 2(1): 42. ZHAO Jie, LIU Baojun, WANG Yufang, WANG Yuongchen, Thompson D A. Implant Compositional Disordering on InGaAs/InP MQW Structures[J]. Semiconductor Photonics and Technology, 1996, 2(1): 42.

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