半导体光子学与技术, 1996, 2 (1): 49, 网络出版: 2011-08-02
Diffusion of Zinc in InxCa1—xAs,InP and GaAs
Diffusion of Zinc in InxCa1—xAs,InP and GaAs
摘要
Abstract
Zinc has been diffused into n-type InxGa1-xAs,InP and GaAs in closed am-poules,and the experimental data for InxGa1-xAs rarely reported previously have been ob-tained,Theoretically the linear relationsip between logarithmic diffusion coefficient lnD and the composition x has been demonstrated,which is in good agreement with the experimental results.The calculated diffusion junction depth for InGaAs based on the diffusion model in which D^∝ c^2 is assumed also agrees well with that of the experment,Finally the overall diffusion time in a multiayer heterostructure was approximated as t=(∑√-ti)^2.
ZHUANG Wanru, ZOU Zhengzhong, WANG Feng, SUN Furong. Diffusion of Zinc in InxCa1—xAs,InP and GaAs[J]. 半导体光子学与技术, 1996, 2(1): 49. ZHUANG Wanru, ZOU Zhengzhong, WANG Feng, SUN Furong. Diffusion of Zinc in InxCa1—xAs,InP and GaAs[J]. Semiconductor Photonics and Technology, 1996, 2(1): 49.