半导体光子学与技术, 1996, 2 (1): 49, 网络出版: 2011-08-02  

Diffusion of Zinc in InxCa1—xAs,InP and GaAs

Diffusion of Zinc in InxCa1—xAs,InP and GaAs
作者单位
Institute of Semiconductors, Academia Sinica, Beijing 100083, CHN
摘要
Abstract
Zinc has been diffused into n-type InxGa1-xAs,InP and GaAs in closed am-poules,and the experimental data for InxGa1-xAs rarely reported previously have been ob-tained,Theoretically the linear relationsip between logarithmic diffusion coefficient lnD and the composition x has been demonstrated,which is in good agreement with the experimental results.The calculated diffusion junction depth for InGaAs based on the diffusion model in which D^∝ c^2 is assumed also agrees well with that of the experment,Finally the overall diffusion time in a multiayer heterostructure was approximated as t=(∑√-ti)^2.

ZHUANG Wanru, ZOU Zhengzhong, WANG Feng, SUN Furong. Diffusion of Zinc in InxCa1—xAs,InP and GaAs[J]. 半导体光子学与技术, 1996, 2(1): 49. ZHUANG Wanru, ZOU Zhengzhong, WANG Feng, SUN Furong. Diffusion of Zinc in InxCa1—xAs,InP and GaAs[J]. Semiconductor Photonics and Technology, 1996, 2(1): 49.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!