半导体光子学与技术, 1996, 2 (1): 66, 网络出版: 2011-08-02
Optical Noninvasive Diagnostic of Semiconductor Devices by Using Laser Beam Probe
Optical Noninvasive Diagnostic of Semiconductor Devices by Using Laser Beam Probe
摘要
Abstract
The optical noninvasive diagnostic of characteristic of silicon semiconductor devices by using a InGaAsP/InP semiconductor laser as an optical probe is reported. The principle of experimental method is based on the dependence of the optical refractive index on the carrier charge density in the active region of devices and detection of variation of refractive index by two laser beam interferometric techniques.
JIANG Jianping, ZHOU Minkang, SUN Chengcheng, HE Shufang, XE Zhizhi. Optical Noninvasive Diagnostic of Semiconductor Devices by Using Laser Beam Probe[J]. 半导体光子学与技术, 1996, 2(1): 66. JIANG Jianping, ZHOU Minkang, SUN Chengcheng, HE Shufang, XE Zhizhi. Optical Noninvasive Diagnostic of Semiconductor Devices by Using Laser Beam Probe[J]. Semiconductor Photonics and Technology, 1996, 2(1): 66.
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