半导体光子学与技术, 1997, 3 (1): 20, 网络出版: 2011-08-04
Amorphous Silicon 16—bit Array Photodetector
Amorphous Silicon 16—bit Array Photodetector
摘要
Abstract
An amorphous silicon 16-bit array photodetector with the a-SiC/a -Si heterojunction diode is presented. The fabrication processes of the device were studied systematically. By the optimum of the diode structure and the preparation procedures, the diode with Id< 10 -12 A/mm2 and photocurrent Ip^0.35 A/W has been obtained at the wavelength of 632 nm.
ZHANG Shaoqiang, XU Zhongyang, ZOU Xuecheng, WANG Changan, ZHOU Xuemei, ZHAO Bofang. Amorphous Silicon 16—bit Array Photodetector[J]. 半导体光子学与技术, 1997, 3(1): 20. ZHANG Shaoqiang, XU Zhongyang, ZOU Xuecheng, WANG Changan, ZHOU Xuemei, ZHAO Bofang. Amorphous Silicon 16—bit Array Photodetector[J]. Semiconductor Photonics and Technology, 1997, 3(1): 20.
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