半导体光子学与技术, 1997, 3 (2): 144, 网络出版: 2011-08-04
Electron Mobility in Tris(8-Hydroxyquinolinolato) Aluminum Thin Film Based on Silicium
Electron Mobility in Tris(8-Hydroxyquinolinolato) Aluminum Thin Film Based on Silicium
摘要
Abstract
We have measured the mobilities of electrons in thin,vapor-deposited films of tris(8-hydroxyquinolinolato) aluminum(Alq 3) based on silicium using a time-of-flight(TOF) technique.The drift of electron mobility is strongly electric field and temperature dependent.At room temperature and an electric field of 2×10 5 V·cm -1 ,the effective mobility of electron is 1.0×10 -5 cm 2·V -1 ·s -1 for 200 nm thick sample.
CHEN Baijun, LIU Shiyong, ZHANG Tieqiao, FEI Haosheng. Electron Mobility in Tris(8-Hydroxyquinolinolato) Aluminum Thin Film Based on Silicium[J]. 半导体光子学与技术, 1997, 3(2): 144. CHEN Baijun, LIU Shiyong, ZHANG Tieqiao, FEI Haosheng. Electron Mobility in Tris(8-Hydroxyquinolinolato) Aluminum Thin Film Based on Silicium[J]. Semiconductor Photonics and Technology, 1997, 3(2): 144.
PDF全文
