半导体光子学与技术, 1998, 4 (2): 78, 网络出版: 2011-08-08
Measurement of Deep Energy Level in InP: Fe by the Method of OTCS
Measurement of Deep Energy Level in InP: Fe by the Method of OTCS
摘要
Abstract
We have measured the deep energy level of the InP:Fe which is semi -insulator through the method of OTCS.The effect of light intensity on OTCS measurement is mainly discussed. There are electron trap of ET=0.034 eV and hole trap of ET=1.13 eVin InP:Fe under the strong light and low temperature .The location of the OTCS peak of electron trap(ET=0.34 eV)moves towards the direction of high temperaturer,when the light intensity was increased,ET is different under different light intensity .It is corrected in terms of theory that the stuff ratio of the deep energy level is affected by the light intensity. The experiments show that the error is decreased greatly with the correction.
SHAO Limei, YANG Wei, YANG Ming, YAN Ruhui. Measurement of Deep Energy Level in InP: Fe by the Method of OTCS[J]. 半导体光子学与技术, 1998, 4(2): 78. SHAO Limei, YANG Wei, YANG Ming, YAN Ruhui. Measurement of Deep Energy Level in InP: Fe by the Method of OTCS[J]. Semiconductor Photonics and Technology, 1998, 4(2): 78.
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