半导体光子学与技术, 2001, 7 (1): 17, 网络出版: 2011-08-10
Fabrication of Poly-Si TFT by Al-induced Lateral Crystallization at Low Temperature
Fabrication of Poly-Si TFT by Al-induced Lateral Crystallization at Low Temperature
摘要
Abstract
Using a new low-temperature process (<600℃), the poly-Si TFT was fabricated by metal - induced lateral crystallization (MILC). An ultrathin aluminum layer was deposited on a - Si film and selectively formed by photolithography. The films were then annealed at 560℃to obtain laterally crystallized poly-Si film, which is used as the channel area of a TFT. The poly-Si TFT showed an on/off current ratio of higher than 1×106at a drain voltage of 5 V. The electrical properties are much better than TFT fabricated by conventional crystallization at 600 ℃.
RAO Rui, XU Chong-yang, SUN Guo-cai, ZHOU Xue-mei, ZENG Xiang-bin, ZHAO Bo-fang. Fabrication of Poly-Si TFT by Al-induced Lateral Crystallization at Low Temperature[J]. 半导体光子学与技术, 2001, 7(1): 17. RAO Rui, XU Chong-yang, SUN Guo-cai, ZHOU Xue-mei, ZENG Xiang-bin, ZHAO Bo-fang. Fabrication of Poly-Si TFT by Al-induced Lateral Crystallization at Low Temperature[J]. Semiconductor Photonics and Technology, 2001, 7(1): 17.
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