发光学报, 2011, 32 (7): 720, 网络出版: 2011-08-10
GaN基PIN结构X射线探测器
GaN-based PIN Detectors for X-ray Detector
摘要
使用GaN基材料制备了PIN结构核辐射探测器, 研究了探测器对X射线响应的多方面性能。在没有X射线照射时, 探测器具有很小的漏电流, 在-10 V时小于0.1 nA。对探测器的X射线的响应时间特性进行了分析和模拟, 给出了很好的物理机制解释。研究了信噪比随外加偏压的变化, 并得到了最佳信噪比对应的工作电压为-20 V。
Abstract
GaN-based PIN radiation detectors were fabricated, and various response properties of the detectors under X-ray irradiation were studied. In the absence of X-ray irradiation, the detectors have very low leakage current less than 0.1 nA at -10 V. Time response of the detectors to X-ray was analyzed and simulated, following a reasonable interpretation of the physical mechanism. The relationship between signal to noise ratio(SNR) and applied bias was investigated, and an optimum voltage of -20 V corresponding to the best SNR was found.
付凯, 于国浩, 陆敏. GaN基PIN结构X射线探测器[J]. 发光学报, 2011, 32(7): 720. FU Kai, YU Guo-hao, LU Min. GaN-based PIN Detectors for X-ray Detector[J]. Chinese Journal of Luminescence, 2011, 32(7): 720.