首页 > 论文 > 半导体光子学与技术 > 9卷 > 1期(pp:26-29)

Effects of Substrate Pretreatment Conditions on Quality of GaN Epilayer

Effects of Substrate Pretreatment Conditions on Quality of GaN Epilayer

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

Abstract

The pure cubic GaN(c-GaN) has been grown on (001)GaAs substrates by ECR-PAMOCVD technique at low temperature using TMGa and high pure N2 as Ga and N sources, respectively. The effects of substrate pretreatment conditions on quality of cubic GaN epilayer are investigated by the measurements of TEM and XRD.It is found that hydrogen plasma cleaning, nitridation and buffer layer growth are very important for quality of cubic GaN epilayer.

Newport宣传-MKS新实验室计划
补充资料

中图分类号:TN312+.8

基金项目:National Natural Science Foundation of China(69976008); National “863” Project of China (863-715-011-0030)

收稿日期:2002-04-23

修改稿日期:2002-06-27

网络出版日期:--

作者单位    点击查看

QIN Fu-wen:Dep. of Electr. Eng. and Appl. Electron., Dalian University of Technology, Dalian 116024, CHNNation. Lab of Mater. Modif. by Three Beams, Dalian University of Technology, Dalian 116024, CHN
GU Biao:Dep. of Electr. Eng. and Appl. Electron., Dalian University of Technology, Dalian 116024, CHNNation. Lab of Mater. Modif. by Three Beams, Dalian University of Technology, Dalian 116024, CHN
XU Yin:Dep. of Electr. Eng. and Appl. Electron., Dalian University of Technology, Dalian 116024, CHNNation. Lab of Mater. Modif. by Three Beams, Dalian University of Technology, Dalian 116024, CHN
WANG San-sheng:Dep. of Electr. Eng. and Appl. Electron., Dalian University of Technology, Dalian 116024, CHNNation. Lab of Mater. Modif. by Three Beams, Dalian University of Technology, Dalian 116024, CHN
YANG Da-zhi:Dept. of Mater. Sci. and Eng., Dalian University of Technology, Dalian 116024, CHN

【1】GU Biao, XU Yin, QIN Fu-wen, et al. Low-temperature growth of cubic-GaN on GaAs substrate[J].J. Rare Metals, 1998, 22(2): 143-145(in Chinese).

【2】GU Biao, XU Yin, SUN Kai, et al. Heteroepitaxy and interface of cubic-GaN on (001) GaAs substrate[J].J. Semiconductor,1998, 19(4): 241-244(in Chinese).

【3】Ino N. MBE growth technique by use ECR plasma excitation (ECR-MBE technique) [J]. Appl. Phys., 1990, 59(12):1 629(51)-1 635(57)(in Japanese).

【4】GU Biao, XU Yin, QIN Fu-wen, et al. Plasma pretreatment of GaAs substrate and ECR-PAMOCVD of cubic proceedings[A]. The 2nd international symposium on blue laser and light emitting diodes[C]. Chiba,Japan:Kazusa Akademia Center,1998.524-527.

引用该论文

QIN Fu-wen,GU Biao,XU Yin,WANG San-sheng,YANG Da-zhi. Effects of Substrate Pretreatment Conditions on Quality of GaN Epilayer[J]. Semiconductor Photonics and Technology, 2003, 9(1): 26-29

QIN Fu-wen,GU Biao,XU Yin,WANG San-sheng,YANG Da-zhi. Effects of Substrate Pretreatment Conditions on Quality of GaN Epilayer[J]. 半导体光子学与技术, 2003, 9(1): 26-29

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF