半导体光子学与技术, 2003, 9 (2): 82, 网络出版: 2011-08-11
Numerical Simulation of Spectral Response for 650 nm Silicon Photodetector
Numerical Simulation of Spectral Response for 650 nm Silicon Photodetector
摘要
Abstract
The theoretical spectral response formula of the N+- N - I - P+silicon photodetector with high/low emission junction is given. At the same time, considering the process requirements, the optimum structure parameters of silicon photodetector are obtained by numerical calculation and simulation. Under the condition of these optimum structure parameters, the responsivity of the silicon photodetector will be 0.48 A/W at 650 nm.
LIU Li-na, CHEN Chao, LIU Cai-hong. Numerical Simulation of Spectral Response for 650 nm Silicon Photodetector[J]. 半导体光子学与技术, 2003, 9(2): 82. LIU Li-na, CHEN Chao, LIU Cai-hong. Numerical Simulation of Spectral Response for 650 nm Silicon Photodetector[J]. Semiconductor Photonics and Technology, 2003, 9(2): 82.
PDF全文
