一种新型有机电致发光二极管的阳极结构, 在玻璃衬底上以半透明的Al膜为出光面, 通过在空穴注入层(HAT-CN)和空穴传输层(NPB)中间插入三氧化钼(MoO3)层, 制备了底发射微腔OLEDs。所制备的器件结构为Glass/Al(15 nm)/HAT-CN(10 nm)/ MoO3 (x nm)/NPB(30 nm)/Alq3(70 nm)/LiF(1 nm)/Al(150 nm)。通过电流密度-电压-亮度性能说明该结构有利于降低驱动电压和增强器件亮度。器件的最高亮度可以达到14 390 cd/m2, 起亮电压为3.4 V左右。设计的空穴型器件证明了该器件结构具有很好的空穴注入和传输特性。研究了光谱窄化和峰值偏移的微腔效应。

A novel anode structure of organic light-emitting diodes was fabricated by inserting a molybdenum trioxide (MoO3) layer into the interface of hole injection layer(HIL) 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) and hole transport layer 4,4′-bis［N-(1-naphthyl)-N-phenylamino］biphenyl (NPB). The microcavity OLED with a 150 nm-thick Al top cathode and a transparent Al bottom anode on a glass substrate was fabricated. It has the configuration of Glass/Al(15 nm)/HAT-CN(10 nm)/MoO3 (x nm)/NPB(30 nm)/Alq3 (70 nm)/LiF (1 nm)/Al(150 nm).The current density-voltage-luminance(J-V-L) performances shows that this structure is beneficial to the reduction of the driving voltage and the enhancement of the luminance. The highest luminance of the device is reached to 14 390 cd/m2 at 13 V, with a turn-on voltage of 3.4 V. “Hole only”devices were fabricated to verify the enhancement of hole injection and transport properties of this structure. The optical characteristics of the microcavity, such as narrowed and peak shift, were examined.