半导体光子学与技术, 2004, 10 (3): 164, 网络出版: 2011-08-15  

Small Signal Circuit Model of Double Photodiodes

Small Signal Circuit Model of Double Photodiodes
作者单位
1 Dept.of Photoelectron.Eng.,Beijing Institute of Technology,Beijing100081,CHN
2 School of Electron.Inform.Eng.,Tianjin University,Tianjin300072,CHN
摘要
Abstract
The transmission delay of photogenerated carriers in a CMOS - process - compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is given.From analysis on the frequency domain of the circuit model the device has two poles.One has the relationship with junction capacitance and the DPD s load,the other withthe depth and the doping concentration of the N-well in the DPD.Different depth of the N-well and different area of the DPDs with bandwidth were compared.The analysis results are important to design the high speed DPDs.

HAN Jian-zhong, Ni Guo-qiang, MAO Lu-hong. Small Signal Circuit Model of Double Photodiodes[J]. 半导体光子学与技术, 2004, 10(3): 164. HAN Jian-zhong, Ni Guo-qiang, MAO Lu-hong. Small Signal Circuit Model of Double Photodiodes[J]. Semiconductor Photonics and Technology, 2004, 10(3): 164.

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