半导体光子学与技术, 2004, 10 (3): 203, 网络出版: 2011-08-15
Reactive Ion Etching of GaAs,GaSb,InP and InAs in Cl2/Ar Plasma
Reactive Ion Etching of GaAs,GaSb,InP and InAs in Cl2/Ar Plasma
摘要
Abstract
Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power. Etch rates of above 0.45μm/min and 1.2μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates (<40 nm/min) were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.
HONG Ting, ZHANG Yong-gang, LIU Tian-dong. Reactive Ion Etching of GaAs,GaSb,InP and InAs in Cl2/Ar Plasma[J]. 半导体光子学与技术, 2004, 10(3): 203. HONG Ting, ZHANG Yong-gang, LIU Tian-dong. Reactive Ion Etching of GaAs,GaSb,InP and InAs in Cl2/Ar Plasma[J]. Semiconductor Photonics and Technology, 2004, 10(3): 203.