半导体光子学与技术, 2004, 10 (4): 260, 网络出版: 2011-08-15
Preparation of Nanosize CdS/PANI Film and Its Photoelectric Properties
Preparation of Nanosize CdS/PANI Film and Its Photoelectric Properties
摘要
Abstract
Nanosize CdS semiconductor particles were synthesized using the solvothermal technique. The structure was characterized by means of XRD,TEM and ED techniques. PANI film was prepared by electro-chemistry method onto the indium-tin oxide glass. The nanoparticles were doped on PANI film by the dipping process, and the self-assembled nanoparticles-PANI composite film was acquired. The photoelectric properties of the self-assembled film were studied by PL andZ-scan method.
ZHONG Huai-zhen, HE Xiao-yun, LI Guo-qiang, CHEN Zhen. Preparation of Nanosize CdS/PANI Film and Its Photoelectric Properties[J]. 半导体光子学与技术, 2004, 10(4): 260. ZHONG Huai-zhen, HE Xiao-yun, LI Guo-qiang, CHEN Zhen. Preparation of Nanosize CdS/PANI Film and Its Photoelectric Properties[J]. Semiconductor Photonics and Technology, 2004, 10(4): 260.
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