半导体光子学与技术, 2007, 13 (1): 76, 网络出版: 2011-08-18
Analysis ofI-VThermal Characteristic on GaN-based p-i-n Ultraviolet Detector
Analysis ofI-VThermal Characteristic on GaN-based p-i-n Ultraviolet Detector
摘要
Abstract
TheI-Vcharacteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperature. The maximum ideality factor is 2.14 at 100℃, which declines above 100℃, and the minimum ideality factor is 1.26 at 300℃. The coefficient of forward voltage vs. temperature is -1.97 mV/℃ with a forward current of 1 mA. Based on double injection model, the deep lying impurity activation energy in the i-region is 0.1 343 eV.
XIE Xue-song, ZHANG Xiao-ling, LV Chang-zhi, LI Zhi-guo, FENG Shi-wei, XU Li-guo. Analysis ofI-VThermal Characteristic on GaN-based p-i-n Ultraviolet Detector[J]. 半导体光子学与技术, 2007, 13(1): 76. XIE Xue-song, ZHANG Xiao-ling, LV Chang-zhi, LI Zhi-guo, FENG Shi-wei, XU Li-guo. Analysis ofI-VThermal Characteristic on GaN-based p-i-n Ultraviolet Detector[J]. Semiconductor Photonics and Technology, 2007, 13(1): 76.
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