半导体光子学与技术, 2006, 12 (1): 21, 网络出版: 2011-08-18
Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector
Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector
摘要
Abstract
According to Maxwellps theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thicknessLis 340 nm, the single mode lightwave can be transmitted only at periodic numberM≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out.
LIU Shu-ping, JIA Yue-hu. Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector[J]. 半导体光子学与技术, 2006, 12(1): 21. LIU Shu-ping, JIA Yue-hu. Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector[J]. Semiconductor Photonics and Technology, 2006, 12(1): 21.
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