半导体光子学与技术, 2008, 14 (4): 240, 网络出版: 2011-08-19
Correlation between Interfacial Oxides and Electrical Characteristics of GaN Schottky Diodes
Correlation between Interfacial Oxides and Electrical Characteristics of GaN Schottky Diodes
摘要
Abstract
The electrical characteristics of GaN schottky diode with and without the interfacial oxides are compared in this paper. The influence of interfacial oxides on the electrical characteristics of the schottky diodes has been confirmed by theI-V, C-Vmeasures. We find the barrier height have a reduction of 0.05 eV~ 0.1 eV. There is an interfacial insulating oxide with the thickness of 0.05 nm~0.1 nm after conventional cleaning. Either the forward or the backward currents increase. The backward punch through voltages are reduced to 50% and the capacitances have increased by 100%.
YU Zhi-wei, ZHOU Wei, ZOU Ze-ya, LUO Qian, DU Jiang-feng, XIA Jian-xin. Correlation between Interfacial Oxides and Electrical Characteristics of GaN Schottky Diodes[J]. 半导体光子学与技术, 2008, 14(4): 240. YU Zhi-wei, ZHOU Wei, ZOU Ze-ya, LUO Qian, DU Jiang-feng, XIA Jian-xin. Correlation between Interfacial Oxides and Electrical Characteristics of GaN Schottky Diodes[J]. Semiconductor Photonics and Technology, 2008, 14(4): 240.
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