通过介电泳方法定向排列了ZnO纳米线, 制作了自组装有序的纳米线紫外探测器。为了适合在金叉指电极上排列, 用水热方法设计生长了超长的ZnO纳米线, 并通过700 ℃的热退火处理, 使得可利用的表面缺陷增多。通过研究器件的光致发光光谱和光响应, 发现光、暗电流比和响应恢复时间有显著提高, 并分析了其中可能的机理。

ZnO nanowires were assembled on Au interdigital electrodes by dielectrophoresis method and fabricated the nanowires UV detector. In order to assemble the ZnO nanowires on interdigital electrodes, the long ZnO nanowires were grown three times by hydrothermal method. Then, the ZnO nanowires was annealed under 700 ℃, which increased the availability of the surface defects. The photoresponse current ratio and recovery time of the UV detector fabricated with the annealed ZnO nanowires were significantly improved. The possible mechanism was studied by the photoluminescence and photoresponse spectra.