制备了以结构 ITO/PCBM∶PVK(x Wt%, ～40 nm)/DPVBi(30 nm)/Alq3(30 nm)/Al为基础的一系列有机发光二极管， 利用电致发光光谱分析了DPVBi/Alq3基有机发光二极管中载流子复合区的移动。 通过氟化锂的阴极修饰， 改变了器件的载流子注入情况； 通过PCBM的浓度变化， 改变了载流子的输运情况， 讨论了这些因素对载流子复合区形成的影响。 同时通过改变对器件所加的电压， 讨论了电压对载流子复合区形成的影响， 并分析了其影响的本质。

Series of organic light emitting devices with basic structure of ITO/PCBM: PVK(x Wt%, ~40 nm)/DPVBi(30 nm)/Alq3(30 nm)/Al were fabricated in order to investigate the carrier recombination region movement in these devices. The carrier injection-dependent, the carrier transport-dependent and the voltage-dependent carrier recombination region movements were investigated respectively by modifying cathode with lithium fluoride, by changing the doping concentration of PCBM and by changing the voltage on the devices. The physical mechanism behind the voltage-dependent carrier recombination region movement was discussed.