光学学报, 1983, 3 (6): 541, 网络出版: 2011-09-15  

掩蔽与选择性热氧化GaAs—GaAlAs多层结构中的应力和光弹性效应

The stresses and photoelastic effects in GaAs GaAlAs multilayer wafers with masked and selective thermal oxidation structure
作者单位
北京大学物理系
摘要
本文计算了掩蔽与选择性热氧化GaAs-GaAlAs多层结构中的应力与光弹性效应.提出介质洛埃镜干涉法,直接观测了GaAs上掩蔽生长热氧化膜引起的应力-光弹性效应的折射率分布,测量结果在定性和数量级上与理论计算一致.本文也扼要介绍了应力和光弹性效应对半导体激光器特性的影响及应用于集成光学的可能性.
Abstract
In this paper, the stresses and photoelastic effects are calculated in GaAs-GaAIAs multilayer wafers with masked and selective thermal oxidation structure. Authors also propose a new method of Lloyd s mirror interference in a medium for determing directly the refractive index variations caused by the photoelastic effect. The estimated values of index variation from our experiments agree with the theoretical ones within an order of magnitude. The above study would be valuable in the field of semiconductor lasers and integrated optics.

刘弘度, 冯哲川, 郭长志. 掩蔽与选择性热氧化GaAs—GaAlAs多层结构中的应力和光弹性效应[J]. 光学学报, 1983, 3(6): 541. LIU HONGDU, FENG ZHECHUAN, GUO CHANGZI. The stresses and photoelastic effects in GaAs GaAlAs multilayer wafers with masked and selective thermal oxidation structure[J]. Acta Optica Sinica, 1983, 3(6): 541.

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