研究了超陷光黑硅表面圆锥阵列结构的设计。将圆锥结构分为五层，利用等效媒质理论进行了参数设计。考虑了硅材料折射率随波长的变化，用严格耦合波理论对不同入射角，圆锥阵列结构高度以及占空比时的反射率进行了计算分析。发现，圆锥阵列超陷光结构的周期为135 nm,高度为480 nm时，在0°~60°入射角范围内，对波长为300~1200 nm的入射光的反射率都小于5%。

The conical array on the surface of ultra-light-trapping black silicon, which is divided into five layers, is designed using the equivalent medium theory. It′s considered that the refractive index of silicon varying with the wavelength. The elements which affect the reflectivity are analyzed systematically using the rigorous coupled-wave theory, such as incident angle, the height of the conical array and the duty factor. According to the simulation, the reflectivity is always less than 5% when the incident wavelength is from 300 to 1200 nm and the incident angle is from 0° to 60° with the conical array′s period of 135 nm and its height of 480 nm.