采用金属有机化学汽相沉积（MOCVD）设备在LiGaO2（100）衬底上制备了结晶性能良好的非极性ZnO薄膜。研究了衬底温度对ZnO薄膜结晶性能的影响。X射线衍射(XRD)分析结果表明在衬底温度为500 ℃时可以获得高质量的（1100）晶面取向的非极性ZnO薄膜。采用原子力显微镜(AFM)观察ZnO薄膜的表面形貌及晶体尺寸，观察到500 ℃生长的ZnO薄膜表面更加平整，晶粒分布均匀，粗糙度均方根值（RMS）为0.626 nm。光致发光(PL)光谱结果显示，ZnO薄膜的带边发光峰均位于375 nm，但是在较低温度下（400 ℃）生长时黄光峰较强，说明低温生长时结晶性能较差，且缺陷较多。

Nonpolar ZnO films of high crystallization have been prepared by metal organic chemical vapor phase deposition on LiGaO2 (100) substrates. Effect of substrate temperature on the crystallization of ZnO films is investigated. X-ray diffraction (XRD) results indicated that high quality nonpolar ZnO films are obtained at 500 ℃. The surface morphologic image and crystal size are observed by atomic force microscope (AFM). The ZnO film deposited at 500 ℃ shows a smoother and uniform morphologic image, the root mean square (RMS) value roughness is 0.626 nm. According to the photoluminoscence (PL) spectra, the near band emission peaks of the ZnO films are located at 375 nm. However, the yellow emission is stronger when the film is deposited at 400 ℃, inferring that the crystallization property of ZnO film is poor at lower temperature, and there are more defects in the film.