首页 > 论文 > 强激光与粒子束 > 23卷 > 8期(pp:2229-2233)

252Cf源和重离子加速器对FPGA的单粒子效应

Single event effects on FPGA of californium252 and heavy-ion accelerator

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

摘要

对10万门基于静态随机存储器的现场可编程门阵列(FPGA)分别在锎-252(252Cf)源和HI-13串列加速器下进行了单粒子效应试验研究,测试了静态单粒子翻转截面及发生单粒子闩锁的线性能量转移阈值,并对试验结果进行了等效性分析比较。试验结果表明:252Cf源引起的FPGA单粒子翻转截面比重离子加速器引起的约低1个数量级;使用252Cf源未能观测到该器件的单粒子闩锁现象,而使用重离子加速器可以测出该FPGA发生单粒子闩锁的线性能量转移阈值;在现代集成电路的宇航辐射效应地面模拟单粒子效应试验中,252Cf源不是理想的测试单粒子闩锁的辐射源。

Abstract

Single event effects(SEEs) test results on a static random access memory(SRAM)-based FPGA with 100 k system gates using californium-252 (252Cf) and the HI-13 tandem-accelerator are presented. The results including the static single event upset(SEU) cross-sections and the linear energy transfer(LET) threshold of single event latchup(SEL) were quantitatively compared and analyzed. The results showed that the SEU cross-sections using 252Cf were an order of magnitude less than the ones using the accelerator. SEL was not observed when the FPGA was exposed to the 252Cf, while SEL LET threshold could be measured when using the heavy-ion accelerator. Therefore, 252Cf is not an ideal radioactive source to test SEL of CMOS circuits fabricated with advanced technologies for experimental simulation of the space environment.

Newport宣传-MKS新实验室计划
补充资料

中图分类号:O472;TN386.1

DOI:10.3788/hplpb20112308.2229

所属栏目:粒子束技术

收稿日期:2010-08-10

修改稿日期:2011-02-18

网络出版日期:--

作者单位    点击查看

范雪:电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054成都华微电子科技有限公司, 成都 610041
李平:电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054成都华微电子科技有限公司, 成都 610041
李威:电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054成都华微电子科技有限公司, 成都 610041
杨志明:成都华微电子科技有限公司, 成都 610041
张斌:电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054
郭红霞:西北核技术研究所, 西安 710024
姚志斌:西北核技术研究所, 西安 710024

联系人作者:范雪

备注:范雪(1980-), 女, 博士研究生,从事集成电路的辐射效应及抗辐加固设计研究; x_fan@foxmail.com。

【1】Wang J J, Katz R B, Sun J S, et al. SRAM based re-programmable FPGA for space applications [J]. IEEE Trans on Nuclear Science, 1999, 46(6):1728-1735.

【2】张宇宁, 张小林, 杨根庆, 等. 商用FPGA器件的单粒子效应模拟实验研究[J]. 宇航学报, 2009, 30(5): 2025-2030.(Zhang Yuning, Zhang Xiaolin, Yang Genqing, et al. Simulation experiment of single event effect in commercial FPGA. Journal of Astronautics, 2009, 30(5): 2025-2030)

【3】Allen G R, Swift G M. Single event effects test results for advanced field programmable gate arrays [C]//Radiation Effects Data Workshop. 2006:115-120.

【4】冯彦君, 华更新, 刘淑芬, 等. 航天电子抗辐射研究综述[J]. 宇航学报, 2007, 28(5): 1071-1080.(Feng Yanjun, Hua Gengxin, Liu Shufen, et al. Radiation hardness for space electronics. Journal of Astronautics, 2007, 28(5): 1071-1080)

【5】Leroy D, Gaillard R, Schaefer E, et al. Variation of SRAM alpha-induced soft error rate with technology node [C]//Rhodes: On-Line Testing Symposium, 2008:253-257.

【6】Felix J A, Dodd P E, Shaneyfelt M R, et al. Radiation response and variability of advanced commercial foundry technologies[J]. IEEE Trans on Nuclear Science, 2006, 53(6):3187-3194.

【7】Duzellier S, Ecoffet R. Recent trends in single-event effect ground testing[J]. IEEE Trans on Nuclear Science, 1996, 43(2):671-677.

【8】Stephen J H, Sanderson T K, Mapper D, et al. Cosmic ray simulation experiments for the study of single event upsets and latch-up in CMOS memories [J]. IEEE Trans on Nuclear Science, 1983, 30(6):4464-4469.

【9】Miyahira T F, Johnston A H, Becker H N, et al. Catastrophic latchup in CMOS analog-to-digital converters[J]. IEEE Trans on Nuclear Science, 2001, 48(6):1833-1840.

【10】Wang J J, Samiee S, Chen H S, et al. Total ionizing dose effects on flashed-based field programmable gate array[J]. IEEE Trans on Nuclear Science, 2004, 51(6):3759-3766.

【11】薛玉雄, 曹洲, 杨世宇, 等. 单粒子效应不同模拟源的等效性实验研究初探[J]. 核技术, 2008,31(2): 123-128.(Xue Yuxiong, Cao Zhou, Yang Shiyu, et al. Equivalent of different simulation source simulating single-event effect experiment. Nuclear Techniques, 2008,31(2): 123-128)

【12】薛玉雄, 曹洲, 杨世宇, 等. IDT6116 单粒子敏感性评估试验技术研究[J]. 原子能科学技术, 2008,42(1): 22-27.(Xue Yuxiong, Cao Zhou, Yang Shiyu, et al. Study on IDT6116 single-event effect sensitivity evaluation test technology. Atomic Energy Science and Technology, 2008,42(1): 22-27)

【13】姚志斌, 何宝平, 张凤祁,等. 静态随机访问存储器型现场可编程门阵列辐照效应测试系统研制[J]. 强激光与粒子束, 2009,21(5): 749-754.(Yao Zhibin, He Baoping, Zhang Fengqi, et al. Development of measurement system for radiation effect on static random access memory based field programmable gate array. High Power Laser and Particle Beams, 2009, 21(5): 749-754)

【14】陈盘训. 半导体器件的和集成电路的辐射效应[M]. 北京:国防工业出版社, 2005.(Chen Panxun. Radiation effects on semiconductor devices and integrated circuits. Beijing: National Defense Industry Press, 2005)

【15】Velazco R, Chapuis R, Labrunee M, et al. Comparison between californium and cyclotron SEU tests[J]. IEEE Trans on Nuclear Science, 1989, 36(6):2383-2387.

【16】Ecoffet R, Duzellier S. Estimation of latch-up sensitive thickness and critical energy using large inclination heavy ion beams. IEEE Trans on Nuclear Science, 1997, 44(6):2378-2385.

【17】李永宏, 贺朝会, 周辉, 等. 应用锎源实验结果预估空间轨道单粒子翻转率[J]. 原子能科学技术, 2009, 43(11): 1029-1033.(Li Yonghong, He Chaohui, Zhou Hui, et al. Prediction for single event upset rate in space orbits based on 252Cf experimental results. Atomic Energy Science and Technology, 2009, 43(11): 1029-1033)

【18】Petersen. Single-event data analysis[J]. IEEE Trans on Nuclear Science, 2008, 55(6):2819-2841.

【19】贺朝会, 李永宏, 杨海亮. 单粒子效应辐射模拟实验研究进展[J]. 核技术, 2007,30(4): 347-351.(He Chaohui, Li Yonghong, Yang Hailiang. Progress in simulation experiments of single event effects. Nuclear Techniques, 2007,30(4): 347-351.

【20】侯明东, 张庆祥, 刘杰, 等. 15.14MeV/u 136Xe离子引起的单粒子效应[J]. 高能物理与核物理, 2002, 26(9): 904-908.(Hou Mingdong, Zhang Qingxiang, Liu Jie, et al. Single event effects induced by 15.14 MeV/u 136Xe Ions. High Energy Physics and Nuclear Physics, 2002, 26(9): 904-908)

引用该论文

Fan Xue,Li Ping,Li Wei,Yang Zhiming,Zhang Bin,Guo Hongxia,Yao Zhibin. Single event effects on FPGA of californium252 and heavy-ion accelerator[J]. High Power Laser and Particle Beams, 2011, 23(8): 2229-2233

范雪,李平,李威,杨志明,张斌,郭红霞,姚志斌. 252Cf源和重离子加速器对FPGA的单粒子效应[J]. 强激光与粒子束, 2011, 23(8): 2229-2233

被引情况

【1】陈睿,余永涛,董刚,上官士鹏,封国强,韩建伟,马英起,朱翔. 不同工艺尺寸CMOS器件单粒子闩锁效应及其防护方法. 强激光与粒子束, 2014, 26(7): 74005--1

【2】张晋新,郭红霞,文林,郭旗,崔江维,范雪,肖尧,席善斌,王信,邓伟. 锗硅异质结晶体管单粒子效应激光微束模拟. 强激光与粒子束, 2013, 25(9): 2433-2438

【3】夏加高,李文新,权昕,李泰国,赵彦荣. 以太网芯片重离子单粒子效应试验. 强激光与粒子束, 2016, 28(8): 28084004--1

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF