设计了带有保护环结构的平面型 24×1 InGaAs线列短波红外探测器，利用 n-i-n＋型 InP/In0.53Ga0.47As/InP外延材料闭管扩散制备了平面型探测器。LBIC测试显示光敏元没有明显扩大，保护环起到了有效的隔离效果；I-V测试表明器件的优值因子 R0A约 4.2×106 .·cm2，在－0.1 V反向偏压下的暗电流密度约 22 nA/cm2，拟合得到的理想因子接近 1，说明正向电流成分主要为扩散电流；在室温 20℃，器件的响应光谱在 0.9～1.68 μm波段范围，其平均峰值电流响应率为 1.24 A/W，平均峰值探测率为 3.0×1012 cm·Hz1/2/W，量子效率接近 95%，响应的不均匀性为 2.63%。

A planar-type 24×1 InGaAs short wave infrared detector with guard-ring structure was designed and fabricated based on n-i-n＋ type InP/In0.53Ga0.47As/InP wafer by sealed-ampoule diffusion method. TheLBIC results make sure that the sensitive area of the pixels is restricted within the designed area by guard-ring structure effectively. The R0A of the detector is about 4.2×106 .·cm2 and the dark current density is about 22 nA/cm2 at－0.1 V at room temperature. The ideality factors simulated from I-V curves come close to 1. The simulation indicates that the main components of the dark current are diffusion current in the vicinity of obverse bias. At the temperature of 20℃, the relative spectral response is in the range of 0.9 μm to1.68 μm. The mean peak responsivity is 1.24 A/W and the mean peak detectivity is 3.0×1012 cm·Hz1/2/W. The quantum efficiency is near to 95%. The responsivity non-uniformity is about 2.63%.